Title :
A new effective channel length determination method for LDD MOSFETs
Author :
Takeuchi, Kiyoshi ; Kasai, Naoki ; Terada, Kazuo
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
A novel effective channel length (Leff) determination method applicable to LDD (lightly doped drain) MOSFETs is described. The new Leff, which is determined as a constant that minimizes bias-dependent dispersion of external resistance, is suited for representing device performance, both in linear and saturation regions. In addition, the bias-dependent Leff previously proposed is discussed and compared with metallurgical channel length. The idea of a local contribution factor to effective channel length is presented for analysis of these methods
Keywords :
insulated gate field effect transistors; semiconductor device testing; LDD MOSFETs; bias-dependent dispersion; determination method; effective channel length; external resistance; lightly doped drain; linear region; saturation regions; Current supplies; Electric resistance; Extrapolation; Impurities; MOSFETs; Microelectronics; National electric code; Testing; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161744
