• DocumentCode
    1626913
  • Title

    A new effective channel length determination method for LDD MOSFETs

  • Author

    Takeuchi, Kiyoshi ; Kasai, Naoki ; Terada, Kazuo

  • Author_Institution
    NEC Corp., Kanagawa, Japan
  • fYear
    1990
  • Firstpage
    215
  • Lastpage
    220
  • Abstract
    A novel effective channel length (Leff) determination method applicable to LDD (lightly doped drain) MOSFETs is described. The new Leff, which is determined as a constant that minimizes bias-dependent dispersion of external resistance, is suited for representing device performance, both in linear and saturation regions. In addition, the bias-dependent Leff previously proposed is discussed and compared with metallurgical channel length. The idea of a local contribution factor to effective channel length is presented for analysis of these methods
  • Keywords
    insulated gate field effect transistors; semiconductor device testing; LDD MOSFETs; bias-dependent dispersion; determination method; effective channel length; external resistance; lightly doped drain; linear region; saturation regions; Current supplies; Electric resistance; Extrapolation; Impurities; MOSFETs; Microelectronics; National electric code; Testing; Threshold voltage; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-87942-588-1
  • Type

    conf

  • DOI
    10.1109/ICMTS.1990.161744
  • Filename
    161744
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1626913