MOCVD grown normally-OFF type AlGaN/GaN HEMTs on 4 inch Si using p-InGaN cap layer with high breakdown

We are reporting a p-InGaN cap layered AlGaN/GaN normally-OFF type HEMTs on silicon substrate with V_G applicable as high as +3.5V without gate leakage. Further we achieved a high breakdown for relatively a small gate-drain length (L_gd) of 3 μm. Demonstrating a normally-OFF type AlGaN/GaN HEMTs on low cost Si substrate, coupled with high breakdown is an important step forward to integrate enhancement and depletion mode devices on Si.