Title :
MOCVD grown normally-OFF type AlGaN/GaN HEMTs on 4 inch Si using p-InGaN cap layer with high breakdown
Author :
Selvaraj, S. Lawrence ; Nagai, Kazuhiro ; Egawa, Takashi
Author_Institution :
Res. Center for Nano-Device & Syst., Nagoya Inst. of Technol., Nagoya, Japan
Abstract :
We are reporting a p-InGaN cap layered AlGaN/GaN normally-OFF type HEMTs on silicon substrate with VG applicable as high as +3.5V without gate leakage. Further we achieved a high breakdown for relatively a small gate-drain length (Lgd) of 3 μm. Demonstrating a normally-OFF type AlGaN/GaN HEMTs on low cost Si substrate, coupled with high breakdown is an important step forward to integrate enhancement and depletion mode devices on Si.
Keywords :
MOCVD; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; p-n junctions; semiconductor device breakdown; AlGaN-GaN; InGaN; MOCVD; Si; VG applicable; gate-drain length; high breakdown; normally-OFF type HEMT; silicon substrate; size 3 mum; Aluminum gallium nitride; Electric breakdown; Gallium nitride; HEMTs; Logic gates; MODFETs; Silicon;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551874
