Title :
Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α = 0.97
Author :
Dasgupta, Sansaptak ; Nidhi ; Raman, A. ; Speck, J.S. ; Mishra, Umesh K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
To summarize a novel nitride based HET with InAIN as the emitter layer is demonstrated. These devices show an excellent common base transfer ratio of 0.96 0.97 and operation in the CE configuration. Nitride based HETs due to the thin base transit region, and high electron injection velocity could offer advantages as high speed RF devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; hole mobility; hot electron transistors; indium compounds; ohmic contacts; DC characteristics; InAlN-GaN-AlGaN; high electron injection velocity; hot electron transistors; room temperature operation; Gallium nitride; Optical wavelength conversion;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551877
