Title :
The emerging role of SiGe BiCMOS technology in wired and wireless communications
Author :
Harame, D. ; Joseph, Alvin ; Coolbaugh, D. ; Freeman, G. ; Newton, Kim ; Parker, S.M. ; Groves, Rob ; Erturk, M. ; Stein, K. ; Volant, R. ; Dickey, Conwell ; Dunn, James ; Subbanna, S. ; Zamat, H. ; Tanji, T. ; Herman, D.A. ; Meyerson, B.S.
Author_Institution :
IBM Corp., Essex Junction, VT
fDate :
6/24/1905 12:00:00 AM
Abstract :
SiGe BiCMOS technology is well suited for both wired and wireless communication areas. For the wired space, the key requirements are very high speed active devices, extremely accurate interconnect modeling (lumped elements and transmission lines), and the ability to do very highly integrated analog and mixed signal chips. With data rates at 40 Gb/s, the distinction between digital and analog circuits becomes blurred and low frequency models are no longer adequate. RF/Analog layouts and models are needed for all active devices. SiGe BiCMOS satisfies all these requirements.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; semiconductor materials; 40 Gbit/s; RF circuit; SiGe; SiGe BiCMOS technology; active device; analog chip; analog circuit; interconnect model; mixed signal chip; wired communication; wireless communication; Analog circuits; BiCMOS integrated circuits; Communications technology; Distributed parameter circuits; Frequency; Germanium silicon alloys; Integrated circuit interconnections; Silicon germanium; Space technology; Wireless communication;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004075
