DocumentCode :
1627020
Title :
Power handling and linearity of MEM capacitive series switches
Author :
Muldavin, J. ; Boisvert, R. ; Bozler, C. ; Rabe, S. ; Keast, C.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Volume :
3
fYear :
2003
Firstpage :
1915
Abstract :
This paper presents the power handling and linearity of a capacitive series MEMS switch. The switching time as a function of incident RF power is also discussed. The MIT Lincoln Laboratory series capacitive MEMS switch handled nearly 10 Watts of RF power under cold switching conditions and up to 1.7 Watts of RF power under hot switching conditions. The power handling is a function of the pull-down voltage of the switch and the frequency of the RF signal.
Keywords :
capacitance; microswitches; microwave switches; 1.7 W; 10 GHz; 10 W; 5 GHz; MEM capacitive series switches; MIT Lincoln Laboratory series capacitive MEMS switch; RF power; RF signal frequency; cold switching conditions; hot switching conditions; incident RF power; linearity; partial down-state capacitance; power handling; pull-down voltage; switching time; Capacitance; Insertion loss; Laboratories; Linearity; Microswitches; Power generation; Power measurement; Radio frequency; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-7695-1
Type :
conf
DOI :
10.1109/MWSYM.2003.1210532
Filename :
1210532
Link To Document :
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