Tunnel field-effect transistors - status and prospects

This paper reviews recent progress in the development of tunnel field-effect transistors (TFETs) toward achieving channel currents comparable to high performance MOSFETs at supply voltages less than 0.5 V and subthreshold swing less than 60 mV/decade, for logic applications. To enable high performance in TFETs, development of narrow bandgap III-V and graphene nanoribbon (GNR) channels is indicated. Beyond the switch, the tunnel junction could provide enhanced functionality and new ways to integrate logic and memory.