Title :
Tunnel field-effect transistors - status and prospects
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
This paper reviews recent progress in the development of tunnel field-effect transistors (TFETs) toward achieving channel currents comparable to high performance MOSFETs at supply voltages less than 0.5 V and subthreshold swing less than 60 mV/decade, for logic applications. To enable high performance in TFETs, development of narrow bandgap III-V and graphene nanoribbon (GNR) channels is indicated. Beyond the switch, the tunnel junction could provide enhanced functionality and new ways to integrate logic and memory.
Keywords :
MOSFET; field effect transistors; tunnel transistors; graphene nanoribbon channel; high performance MOSFET; high performance in TFET; logic application; memory; narrow bandgap; subthreshold swing; supply voltage; tunnel field-effect transistors; tunnel junction; CMOS integrated circuits; CMOS technology; Silicon;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551883
