• DocumentCode
    1627172
  • Title

    50-Gb/s silicon modulator using 250-µm-Long phase shifter based-on forward-biased pin diodes

  • Author

    Akiyama, S. ; Baba, T. ; Imai, M. ; Akagawa, T. ; Noguchi, M. ; Saito, E. ; Noguchi, Y. ; Hirayama, N. ; Horikawa, T. ; Usuki, T.

  • Author_Institution
    Photonics Electron. Technol. Res. Assoc. (PETRA), Tsukuba, Japan
  • fYear
    2012
  • Firstpage
    192
  • Lastpage
    194
  • Abstract
    We present a 50-Gb/s silicon Mach-Zehnder modulator that uses the shortest 250-μm long phase shifter. A 4.2-dB extinction ratio was obtained at 50 Gb/s with 4.35 V peak-to-peak (Vpp) driving signals and 45-mW power consumption.
  • Keywords
    Mach-Zehnder interferometers; extinction coefficients; integrated optoelectronics; optical modulation; optical phase shifters; p-i-n diodes; power consumption; silicon-on-insulator; Si; bit rate 50 Gbit/s; extinction ratio; forward-biased pin diodes; peak-to-peak driving signals; phase shifter; power 45 mW; power consumption; silicon Mach-Zehnder modulator; High speed optical techniques; Optical modulation; Optical waveguides; PIN photodiodes; Phase shifters; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4577-0826-8
  • Type

    conf

  • DOI
    10.1109/GROUP4.2012.6324130
  • Filename
    6324130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1627172