• DocumentCode
    1627236
  • Title

    44Gbit/s silicon Mach-Zehnder modulator based on interleaved PN junctions

  • Author

    Xu, Hao ; Xiao, Xi ; Li, Xianyao ; Li, Zhiyong ; Chu, Tao ; Yu, Yude ; Yu, Jinzhong

  • Author_Institution
    State Key Lab. of integrated Optoelectron., Inst. of Semicond., Beijing, China
  • fYear
    2012
  • Firstpage
    201
  • Lastpage
    203
  • Abstract
    We report a 44 Gbit/s silicon Mach-Zehnder modulator based on interleaved PN junctions. Modulation efficiency of VπLπ=1.5~2.0 V·cm and carrier induced loss of ~1dB/mm are obtained with a moderate doping density of 2×1017 cm-3.
  • Keywords
    doping profiles; elemental semiconductors; integrated optoelectronics; optical losses; optical modulation; p-n junctions; silicon; Si; bit rate 44 Gbit/s; carrier induced loss; doping density; interleaved PN junctions; modulation efficiency; silicon Mach-Zehnder modulator; Doping; High speed optical techniques; Junctions; Modulation; Optical device fabrication; Optical losses; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4577-0826-8
  • Type

    conf

  • DOI
    10.1109/GROUP4.2012.6324133
  • Filename
    6324133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1627236