DocumentCode :
1627236
Title :
44Gbit/s silicon Mach-Zehnder modulator based on interleaved PN junctions
Author :
Xu, Hao ; Xiao, Xi ; Li, Xianyao ; Li, Zhiyong ; Chu, Tao ; Yu, Yude ; Yu, Jinzhong
Author_Institution :
State Key Lab. of integrated Optoelectron., Inst. of Semicond., Beijing, China
fYear :
2012
Firstpage :
201
Lastpage :
203
Abstract :
We report a 44 Gbit/s silicon Mach-Zehnder modulator based on interleaved PN junctions. Modulation efficiency of VπLπ=1.5~2.0 V·cm and carrier induced loss of ~1dB/mm are obtained with a moderate doping density of 2×1017 cm-3.
Keywords :
doping profiles; elemental semiconductors; integrated optoelectronics; optical losses; optical modulation; p-n junctions; silicon; Si; bit rate 44 Gbit/s; carrier induced loss; doping density; interleaved PN junctions; modulation efficiency; silicon Mach-Zehnder modulator; Doping; High speed optical techniques; Junctions; Modulation; Optical device fabrication; Optical losses; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
ISSN :
1949-2081
Print_ISBN :
978-1-4577-0826-8
Type :
conf
DOI :
10.1109/GROUP4.2012.6324133
Filename :
6324133
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1627236
بازگشت