Sub-micron InGaAs Esaki diodes with record high peak current density

Author

Pawlik, D. ; Barth, M. ; Thomas, P. ; Kurinec, S. ; Mookerjea, S. ; Mohata, D. ; Datta, S. ; Cohen, S. ; Ritter, D. ; Rommel, S.

Author_Institution

Dept. of Electr. & Microelectron. Eng., Rochester Inst. of Technol., Rochester, NY, USA

fYear

2010

Firstpage

163

Lastpage

164

Abstract

In conclusion, the authors have reported the highest current density ever achieved for a tunnel junction with a J_ρ of 975 kA/cm2. Furthermore, reducing the p-type doping in TD1 by half (TD2) reduced J_ρ by 78.5% and doubled the PVCR. These results may be used to calibrate band-to-band tunneling models. The fabrication of sub-micron devices, enabled by E-beam lithography and BCB as an ILD, was key to limiting output current and series resistance. Finally, specific resistivities have been extracted which may be used to compare the use of tunnel junctions as contacts; applications include source/drain regrowth and multi-junction solar cells.

Keywords

III-V semiconductors; current density; electron beam lithography; indium compounds; semiconductor doping; tunnel diodes; tunnelling; BCB; ILD; PVCR; band-to-band tunneling models; e-beam lithography; multijunction solar cells; output current; p-type doping; record high peak current density; series resistance; source/drain regrowth; submicron Esaki diodes; submicron devices; tunnel junction; Current density; Gold; IP networks; Indium gallium arsenide; Indium phosphide; Junctions; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2010

Conference_Location

South Bend, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-6562-0

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2010.5551888

Filename

5551888