Title :
Sub-micron InGaAs Esaki diodes with record high peak current density
Author :
Pawlik, D. ; Barth, M. ; Thomas, P. ; Kurinec, S. ; Mookerjea, S. ; Mohata, D. ; Datta, S. ; Cohen, S. ; Ritter, D. ; Rommel, S.
Author_Institution :
Dept. of Electr. & Microelectron. Eng., Rochester Inst. of Technol., Rochester, NY, USA
Abstract :
In conclusion, the authors have reported the highest current density ever achieved for a tunnel junction with a Jρ of 975 kA/cm2. Furthermore, reducing the p-type doping in TD1 by half (TD2) reduced Jρ by 78.5% and doubled the PVCR. These results may be used to calibrate band-to-band tunneling models. The fabrication of sub-micron devices, enabled by E-beam lithography and BCB as an ILD, was key to limiting output current and series resistance. Finally, specific resistivities have been extracted which may be used to compare the use of tunnel junctions as contacts; applications include source/drain regrowth and multi-junction solar cells.
Keywords :
III-V semiconductors; current density; electron beam lithography; indium compounds; semiconductor doping; tunnel diodes; tunnelling; BCB; ILD; PVCR; band-to-band tunneling models; e-beam lithography; multijunction solar cells; output current; p-type doping; record high peak current density; series resistance; source/drain regrowth; submicron Esaki diodes; submicron devices; tunnel junction; Current density; Gold; IP networks; Indium gallium arsenide; Indium phosphide; Junctions; Resistance;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551888
