Title :
High temperature microwave modelling and circuit design with MESFETs and HBTs
Author :
Krozer, V. ; Schüssler, M. ; Fricke, K. ; Lee, W.Y. ; Stolte, N. ; Brand, M. ; Hartnagel, Hans L.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
Abstract :
Novel microwave circuit structures have been designed and fabricated for application at high operation temperatures. The required simulation and characterization of MESFET and HBT devices at high ambient temperatures have been carried out. Novel physical analytical models for the high temperature performance of MESFETs and HBTs were developed. As an example a fully integrated radar front-end operating at temperatures up to 200°C is given in the paper
Keywords :
MMIC; integrated circuit design; integrated circuit modelling; radar equipment; 25 to 200 degC; HBT; MESFET; MMICs; ambient temperatures; circuit design; high temperature microwave modelling; integrated radar front-end; microwave circuit structures; physical analytical models; Circuit synthesis; Heterojunction bipolar transistors; MESFET circuits; MMICs; Power generation; Power measurement; Scattering parameters; Temperature distribution; Temperature measurement; Voltage-controlled oscillators;
Conference_Titel :
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location :
San Francisco
Print_ISBN :
0-7803-2516-8
DOI :
10.1109/ISSSE.1995.498004
