Title :
AlGaAs/GaAs anti GaInP/GaAs HBT for high temperature microwave operation
Author :
Schussler, Martin ; Krozer, V. ; Pfeiffer, J. ; Statzner, T. ; Lee, W.Y. ; Hartnagel, H.L.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
Abstract :
In this paper the basics of high temperature HBTs are described. Starting from the wafer structure, and ending with obligatory technological requirements. The paper is completed by a comparison between two very promising HBT material systems in terms of high frequency and high temperature performance
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave measurement; microwave power transistors; power bipolar transistors; HBT; high frequency performance; high temperature microwave operation; material systems; power bipolar transistors; wafer structure; Frequency; Gallium arsenide; Gold; Heterojunction bipolar transistors; Kelvin; Microwave transistors; Ohmic contacts; Temperature sensors; Thermal degradation; Thermal resistance;
Conference_Titel :
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location :
San Francisco
Print_ISBN :
0-7803-2516-8
DOI :
10.1109/ISSSE.1995.498005
