Title :
Heterojunction bipolar phototransistors for analog microwave photonic systems
Author :
Paolella, A. ; De Barros, L.E.M. ; Herczfeld, P. ; Enquist, P. ; Van Meerbreke, W.
Author_Institution :
Army Res. Lab. PSD, Fort Monmouth, NJ, USA
Abstract :
The Heterojunction Bipolar Transistor (HBT) commonly used in GaAs MMICs for microwave and millimeter wave systems can perform as a high speed photodetector with inherent gain and high linearity. The use of the phototransistor will allow circuit designers to develop a new class of photonic/millimeter wave circuits. A new model for the HBT has been developed which solves for the electrical and photogenerated currents. Experimental and theoretical curves relating to the device behavior are presented and compared
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; millimetre wave bipolar transistors; photodetectors; phototransistors; GaAs; analog microwave photonic systems; device behavior; gain; heterojunction bipolar phototransistors; high speed photodetector; linearity; photogenerated currents; photonic/millimeter wave circuits; Equations; Gallium arsenide; Heterojunction bipolar transistors; Linearity; MESFETs; Nonlinear optics; Optical receivers; Optical saturation; Phototransistors; Stimulated emission;
Conference_Titel :
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location :
San Francisco
Print_ISBN :
0-7803-2516-8
DOI :
10.1109/ISSSE.1995.498006
