Title :
Investigation of the scalability of ultra thin body (UTB) double gate tunnel FET using physics based 2D analytical model
Author :
Liu, Lu ; Datta, Suman
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
Tunnel Field Effect Transistor (TFET) is an emerging ultra-low power transistor that can, in principle, exhibit <;60mV/dec slope. While a limited number of 1-dimensional analytical modeling work have been reported till date, the influence of drain bias on the transistor characteristics is not included in these models. In this work, we present a 2-dimensional analytical model of double gate ultra thin body TFET (Fig. 1) taking into consideration the influence of the drain bias. Based on this model, we show that the Tunnel FETs exhibit superior short channel effects than their MOSFET counterparts at comparable dimensions, but the scalability of the former degrades at a faster rate with gate length scaling.
Keywords :
field effect transistors; tunnel transistors; 1-dimensional analytical modeling; MOSFET counterparts; UTB double gate TFET; drain bias; physics-based 2D analytical model; ultralow power transistor; ultrathin body double gate tunnel FET; Analytical models; Electric fields; Electric potential; Electrostatics; Junctions; Logic gates; MOSFET circuits;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551890