• DocumentCode
    1627452
  • Title

    Single event effects resulted by parasitic structures of MOS transistors in SOI CMOS ICs and their hardness

  • Author

    Liu, Zhongli ; Huang, Ru ; Gao, Jiantou ; Xue, Shoubin ; Yu, Fang

  • Author_Institution
    Inst. of Semicond., CAS, Beijing, China
  • fYear
    2010
  • Firstpage
    2074
  • Lastpage
    2076
  • Abstract
    The paper describes the parasitic structures of MOS transistors in SOI CMOS ICs at first. Then the influences of the parasitic structures on single particles radiation effect of MOS transistors in SOI CMOS ICs are presented. Finally the hardness methods of single event effects resulted by the parasitic structures of MOS transistors are given and the estimate about their excellence is made out.
  • Keywords
    MOSFET; radiation hardening (electronics); silicon-on-insulator; MOS transistor; SOI CMOS IC; parasitic structure; single particle radiation effect; Bipolar transistors; CMOS integrated circuits; MOSFET circuits; MOSFETs; Periodic structures; Random access memory; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667281
  • Filename
    5667281
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1627452