Title :
Process optimization for a complementary bipolar IC technology with 5.5-GHz fT pnp transistors
Author :
Archer, Tim ; Yamaguchi, Tad ; Johnston, Roger ; Lee, June
Author_Institution :
Tektronix, Inc., Beaverton, OR, USA
Abstract :
A complementary bipolar IC process has been developed featuring 9.0-GHz fT npn and 5.5-GHz fT pnp transistors. Process conditions for emitter, base, and collector of pnp transistors are optimized in order to achieve the best performance trade-off between current gain, early voltage, and cut-off frequency. With the optimized process conditions, the HFE × VA of the pnp transistor is 350 V with fT of 5.5 GHz and fmax of 8.5 GHz. These high performance pnp transistors are integrated into an existing 9.0-GHz fT npn bipolar process without introducing excessive additional process complexity or manufacturing cost. In addition, Schottky diodes, p-channel JFETs, and laser wafer trimmable precision NiCr resistors are integrated into the process to enhance analog circuit design capability
Keywords :
bipolar analogue integrated circuits; 5.5 GHz; 9 GHz; RTA; Schottky diodes; analog circuit design capability; base implant dose; complementary bipolar IC process; current gain; cut-off frequency; doping concentration gradient; early voltage; furnace anneal; laser wafer trimmable; npn transistors; optimized process conditions; p-channel JFETs; pnp transistors; precision NiCr resistors; Bipolar analog integrated circuits;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617483
