Title :
A quantum ring detector for the 1–3 terahertz range with very high responsivity and specific detectivity
Author :
Bhowmick, S. ; Huang, G. ; Guo, W. ; Lee, C.S. ; Bhattachary, P. ; Ariyawansa, G. ; Perera, A.G.U.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
This paper discusses quantum ring detector which is important for a number of applications including molecular spectroscopy, medical diagnostics, security and surveillance, quality control, and astronomy. It has been used for the detection of long wavelength radiation. This paper proposes a InAs/GaAs quantum ring intersublevel detector (QRID) with spectral response peaking at 1.82 THz (165 μm) and having a peak responsivity Rρ of 25 A/W and specific detectivity D* of x 1016 Jones for 1 V bias at 5.2 K.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor quantum dots; terahertz waves; wide band gap semiconductors; InAs-GaAs; QRID; astronomy; frequency 1 THz to 3 THz; long wavelength radiation detection; medical diagnostics; molecular spectroscopy; quality control; quantum ring intersublevel detector; responsivity; semiconductor based quantum dot detectors; specific detectivity; terahertz radiation; Gallium arsenide;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551893