Enhanced responsivity in a novel AlGaN / GaN plasmon-resonant terahertz detector using gate-dipole antenna with parasitic elements

In this paper, we present a novel AlGaN/GaN heterojunction FET which can detect THz radiation directly at a gate electrode with high responsivity. We present a novel AlGaN/GaN THz detector utilizing the plasmon resonance. The device has a simple HFET structure in which the gate is used as a dipole antenna and the source/drain are used for the parasitic elements of it to increase the gain. The device is free from the long transmission line so that very high responsivity of 1.1x10³ V/W is attained by reducing the propagation loss. The presented THz detector with high sensitivity is useful for future THz applications.