Title :
A highly efficient electrically pumped optical amplifier integrated on a SOI waveguide circuit
Author :
Keyvaninia, S. ; Roelkens, G. ; Van Thourhout, D. ; Fedeli, J.-M. ; Messaoudene, S. ; Duan, G.-H. ; Lamponi, M. ; Lelarge, F. ; Geluk, E.J. ; Smalbrugge, B.
Author_Institution :
Photonics Res. Group, Ghent Univ., Ghent, Belgium
Abstract :
A heterogeneously integrated III-V-on-silicon optical amplifier utilizing an ultra-thin DVS-BCB die-to-wafer bonding process is reported. A novel design exploiting high confinement in the active waveguide is demonstrated showing low power consumption operation. 13dB on-chip gain is achieved for 40mA drive current at room temperature.
Keywords :
III-V semiconductors; electron beam pumping; integrated optoelectronics; optical design techniques; optical pumping; power consumption; semiconductor optical amplifiers; silicon-on-insulator; wafer bonding; waveguide lasers; SOI waveguide circuit; Si; current 40 mA; drive current; electrically pumped optical amplifier; heterogeneously integrated III-V-on-silicon optical amplifier; low power consumption operation; on-chip gain; optical confinement; optical waveguide; ultrathin DVS-BCB die-to-wafer bonding; Bonding; Indium phosphide; Optical amplifiers; Optical fiber amplifiers; Photonics; Silicon; III–V-on-silicon amplifier; adhesive bonding; heterogeneous integration;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324140
