A highly efficient electrically pumped optical amplifier integrated on a SOI waveguide circuit

Author

Keyvaninia, S. ; Roelkens, G. ; Van Thourhout, D. ; Fedeli, J.-M. ; Messaoudene, S. ; Duan, G.-H. ; Lamponi, M. ; Lelarge, F. ; Geluk, E.J. ; Smalbrugge, B.

Author_Institution

Photonics Res. Group, Ghent Univ., Ghent, Belgium

fYear

2012

Firstpage

222

Lastpage

224

Abstract

A heterogeneously integrated III-V-on-silicon optical amplifier utilizing an ultra-thin DVS-BCB die-to-wafer bonding process is reported. A novel design exploiting high confinement in the active waveguide is demonstrated showing low power consumption operation. 13dB on-chip gain is achieved for 40mA drive current at room temperature.

Keywords

III-V semiconductors; electron beam pumping; integrated optoelectronics; optical design techniques; optical pumping; power consumption; semiconductor optical amplifiers; silicon-on-insulator; wafer bonding; waveguide lasers; SOI waveguide circuit; Si; current 40 mA; drive current; electrically pumped optical amplifier; heterogeneously integrated III-V-on-silicon optical amplifier; low power consumption operation; on-chip gain; optical confinement; optical waveguide; ultrathin DVS-BCB die-to-wafer bonding; Bonding; Indium phosphide; Optical amplifiers; Optical fiber amplifiers; Photonics; Silicon; III–V-on-silicon amplifier; adhesive bonding; heterogeneous integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2012 IEEE 9th International Conference on

Conference_Location

San Diego, CA

ISSN

1949-2081

Print_ISBN

978-1-4577-0826-8

Type

conf

DOI

10.1109/GROUP4.2012.6324140

Filename

6324140