Title :
High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh
Author :
Huang, Yifei ; Hekmatshoar, Bahman ; Wagner, Sigurd ; Sturm, James C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
Abstract :
Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of >10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh.
Keywords :
LED displays; amorphous semiconductors; elemental semiconductors; organic light emitting diodes; random-access storage; silicon; thin film transistors; AMOLED pixels; Si; device structure; drain saturation current dependence; drain voltage; high retention-time nonvolatile amorphous silicon TFT memory; room temperature retention time; short retention time; static active matrix OLED display; Organic light emitting diodes; Pixel;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551896
