• DocumentCode
    1627560
  • Title

    High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh

  • Author

    Huang, Yifei ; Hekmatshoar, Bahman ; Wagner, Sigurd ; Sturm, James C.

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
  • fYear
    2010
  • Firstpage
    179
  • Lastpage
    180
  • Abstract
    Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of >10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh.
  • Keywords
    LED displays; amorphous semiconductors; elemental semiconductors; organic light emitting diodes; random-access storage; silicon; thin film transistors; AMOLED pixels; Si; device structure; drain saturation current dependence; drain voltage; high retention-time nonvolatile amorphous silicon TFT memory; room temperature retention time; short retention time; static active matrix OLED display; Organic light emitting diodes; Pixel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551896
  • Filename
    5551896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1627560