Title :
Fully terminated Ka band high isolation, high power MMIC SPDT switch in GaAs PIN technology
Author :
Levy, O. ; Madjar, A. ; Kryger, D. ; Matarasso, S.
Author_Institution :
RAFAEL, Haifa, Israel
Abstract :
In this paper we present the design and performance of a millimeter wave MMIC SPDT switch. The switch is produced in a GaAs PIN process. The switch is fully terminated in all 3 ports due to an integrated resistor layer in the PIN process, and has an OFF state. The isolation is better than 40 db, return loss better than 20 db in all states. The power handling capability exceeds 5 watt. To our best knowledge, this is the first reported millimeter wave switch to possess all of the above properties.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; microwave switches; p-i-n diodes; 20 dB; 5 W; GaAs; GaAs PIN diode; Ka-band; fully-terminated millimeter-wave switch; high-power MMIC SPDT switch; integrated resistor layer; isolation; power handling; return loss; Anodes; Cathodes; Diodes; Gallium arsenide; Isolation technology; MMICs; Microstrip; Millimeter wave technology; Power transmission lines; Switches;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210556
