• DocumentCode
    1627612
  • Title

    A dual-band SiGe HBT low noise amplifier

  • Author

    Xie, Hong-Yun ; Lu, Zhi-yi ; Zhang, Wan-Rong ; Shen, Pei ; Ding, Chun-bao ; You, Yun-xia ; Sun, Bo-tao

  • Author_Institution
    Colledge of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
  • fYear
    2010
  • Firstpage
    668
  • Lastpage
    670
  • Abstract
    To adapt to the rapid development of multi-standard mobile communication, a low noise amplifier (LNA) that can operate at two frequencies of 800MHz and 1.8GHz respectively was designed. SiGe HBTs with good noise performance were used in the design. The Cascode circuit topology was adopted to reduce the Miller effect of the transistor. Inductor degeneration in emitter was introduced to decouple the input impedance from the noise factor. The input matching is achieved through serial and parallel LC circuit which can resonate at two frequencies simultaneously. The output matching circuit was realized by adjusting the load impedance to 50Ω. The simulated results show that the transmission gain S21 reached 24.3dB and 21.3dB at 800MHz and 1.8GHz respectively. Both S11 reached -13dB simultaneously, Both S22 are lower than -27dB. The noise figures are 3.3dB and 2.0dB at these two frequencies respectively. Finally the layout of the monolithic integrated dual-band LNA is presented.
  • Keywords
    Ge-Si alloys; MMIC amplifiers; UHF amplifiers; capacitors; inductors; integrated circuit layout; low noise amplifiers; mobile radio; LC circuit; Miller effect; SiGe; cascode circuit topology; dual band HBT low noise amplifier; frequency 1.8 GHz; frequency 800 MHz; gain 21.3 dB; gain 24.3 dB; inductor degeneration; integrated circuit layout; monolithic integrated dual band LNA; multistandard mobile communication; noise figure 3.3 dB; Dual band; Impedance; Impedance matching; Inductors; Noise; Noise figure; Resonant frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667287
  • Filename
    5667287