Title :
A V-band GaAs HEMT uniplanar monolithic integrated antenna and receiver front end
Author :
I-Jen Chen ; Huei Wang ; Powen Hsu
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A V-band monolithic integrated folded-slot balanced mixer with LO source on the same chip is presented for the first time. The circuit is designed based on the uniplanar structures such as coplanar waveguide (CPW) and slotline. The embedding impedance of the folded-slot antenna is calculated by finite-difference time-domain (FDTD) method and compared with the impedance of the Schottky-Barrier diode at 60 GHz to design the mixer. The V-band voltage control oscillator (VCO) is developed based on the 0.15 /spl mu/m GaAs HEMT technology. A reduced-size CPW-to-slotline transition is designed for the LO pumping network. The measured results of the VCO, transition, and mixer are included.
Keywords :
III-V semiconductors; Schottky diode mixers; coplanar waveguide components; finite difference time-domain analysis; gallium arsenide; high electron mobility transistors; millimetre wave antennas; millimetre wave field effect transistors; millimetre wave mixers; millimetre wave oscillators; millimetre wave receivers; slot antennas; slot line components; voltage-controlled oscillators; waveguide transitions; 0.15 micron; 60 GHz; CPW-to-slotline transition; FDTD method; GaAs; GaAs HEMT technology; LO pumping network; V-band; balanced Schottky diode mixer; embedding impedance; monolithic integration; receiver front-end; uniplanar folded-slot antenna; voltage control oscillator; Circuits; Coplanar waveguides; Finite difference methods; Gallium arsenide; HEMTs; Impedance; Receiving antennas; Slotline; Time domain analysis; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210557
