High-uniformity waveguide-integrated metal-semiconductor-metal germanium photodetector with sige capping layer and its application to differential receivers

Author

Miura, Makoto ; Fujikata, Junichi ; Noguchi, Masataka ; Okamoto, Daisuke ; Horikawa, Tsuyoshi ; Arakawa, Yasuhiko

Author_Institution

Inst. for Photonics-Electron. Convergence Syst. Technol. (PECST), Warabi, Japan

fYear

2012

Firstpage

231

Lastpage

233

Abstract

Differential pairs of metal-semiconductor-metal (MSM) germanium (Ge) photodetectors (PDs) with an epitaxially-tuned silicon germanium (SiGe) capping layer are fabricated. PDs with high responsivity (1.0 A/W) and low dark current (33 mA/cm²) are obtained, and low-noise characteristics and 10 Gbps data transmission is confirmed in the differential MSM PDs.

Keywords

Ge-Si alloys; elemental semiconductors; germanium; integrated optoelectronics; metal-semiconductor-metal structures; optical fabrication; optical noise; optical receivers; optical tuning; optical waveguides; photodetectors; semiconductor epitaxial layers; Ge-SiGe; bit rate 10 Gbit/s; dark current; data transmission; differential MSM Ge PD; differential pairs; differential receivers; epitaxially-tuned silicon germanium capping layer; high-uniformity waveguide-integrated metal-semiconductor-metal germanium photodetector; low-noise characteristics; responsivity; Dark current; Metals; Optical waveguides; Photodetectors; Receivers; Silicon; Silicon germanium; Germanium photodetector; SiGe capping layer; differential photodetectors; metal-semiconductor-metal photodetector;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2012 IEEE 9th International Conference on

Conference_Location

San Diego, CA

ISSN

1949-2081

Print_ISBN

978-1-4577-0826-8

Type

conf

DOI

10.1109/GROUP4.2012.6324143

Filename

6324143