Experimental investigation on the short circuit behaviors of robust IGBT devices

Author

Musumeci, Salvatore ; Pagano, Rosario ; Raciti, Angelo ; Fragapane, Leonardo ; Melito, Maurizio

Author_Institution

DEES-ARIEL, Catania Univ., Italy

fYear

2002

fDate

6/24/1905 12:00:00 AM

Abstract

The paper deals with the short circuit behavior of a new family of robust IGBT devices in several laboratory tests conditions. The transient behaviors in hard switching fault (HSF) and fault under load (FUL) have been determined by means of laboratory tests on inductive load. The IGBTs have been tested in several working conditions aiming to account for the different device characteristics, the differences in both the layout parasitic and the gate driving conditions. Also the temperature variation has been considered in the faulted behavior in order to fully evaluate the switching performances as function of the main involved parameters. Finally the characteristics of a smart IGBT device with increased short circuit ruggedness are discussed.

Keywords

insulated gate bipolar transistors; power semiconductor switches; short-circuit currents; fault under load; gate drive; hard switching fault; inductive load; layout parasitic; robust IGBT device; short circuit ruggedness; smart IGBT device; switching characteristics; temperature dependence; transient characteristics; Circuit faults; Circuit testing; Employee welfare; Immune system; Insulated gate bipolar transistors; Laboratories; Robustness; Strips; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on

Print_ISBN

0-7803-7380-4

Type

conf

DOI

10.1109/ICCDCS.2002.1004096

Filename

1004096