DocumentCode
1627635
Title
Low-voltage, high-mobility organic thin-film transistors with improved stability
Author
Zschieschang, Ute ; Yamamoto, Tatsuya ; Takimiya, Kazuo ; Kuwabara, Hirokazu ; Ikeda, Masaaki ; Sekitani, Tsuyoshi ; Someya, Takao ; Klauk, Hagen
Author_Institution
Max Planck Inst. for Solid State Res., Stuttgart, Germany
fYear
2010
Firstpage
177
Lastpage
178
Abstract
This paper discusses organic thin-film transistors. Due to the performance degradation of pentacene based devices, this paper proposes a six-ring fused heteroarene, dinaphtho-[2,3-b:2´,3´-f]thieno[3,2-b]thiophene (DNTT), which has a crystal structure and thin-film morphology similar to those of pentacene, but less susceptible to oxidation. This paper reports on the static and dynamic performance and on the stability of DNTT TFTs on flexible polyethylene naphthalate (PEN) substrates.
Keywords
crystal structure; organic compounds; organic field effect transistors; thin film transistors; DNTT TFT; PEN substrates; crystal structure; dinaphtho-[2,3-b:2´,3´-f]thieno[3,2-b]thiophene; flexible polyethylene naphthalate; organic thin film transistors; pentacene based devices; Gold; Inverters; Logic gates; Pentacene;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2010
Conference_Location
South Bend, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-6562-0
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2010.5551899
Filename
5551899
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