Title :
Ferroelectric properties of PZT and PLZT films on Si substrate with ITO buffer layer
Author :
Matsumoto, Masaki ; Ebuchi, Shingo ; Maruyama, Takeo ; Iiyama, Koichi
Author_Institution :
Natural Sci. & Technol., Kanazawa Univ., Ishikawa, Japan
Abstract :
PZT and PLZT films on Si substrates were deposited to realize electro-optic modulators on LSI chip. The coercive field and remnant polarization of PZT and PLZT film were 148kV/cm and 50μC/cm2, 170kV/cm and 32μC/cm2, respectively.
Keywords :
electro-optical modulation; elemental semiconductors; large scale integration; semiconductor thin films; silicon; ITO buffer layer; LSI chip; PLZT films; PZT films; electro-optic modulators; ferroelectric properties; Films; Indium tin oxide; Modulation; Optical buffering; Optical device fabrication; Silicon; Substrates;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324145
