• DocumentCode
    1627669
  • Title

    Ferroelectric properties of PZT and PLZT films on Si substrate with ITO buffer layer

  • Author

    Matsumoto, Masaki ; Ebuchi, Shingo ; Maruyama, Takeo ; Iiyama, Koichi

  • Author_Institution
    Natural Sci. & Technol., Kanazawa Univ., Ishikawa, Japan
  • fYear
    2012
  • Firstpage
    237
  • Lastpage
    239
  • Abstract
    PZT and PLZT films on Si substrates were deposited to realize electro-optic modulators on LSI chip. The coercive field and remnant polarization of PZT and PLZT film were 148kV/cm and 50μC/cm2, 170kV/cm and 32μC/cm2, respectively.
  • Keywords
    electro-optical modulation; elemental semiconductors; large scale integration; semiconductor thin films; silicon; ITO buffer layer; LSI chip; PLZT films; PZT films; electro-optic modulators; ferroelectric properties; Films; Indium tin oxide; Modulation; Optical buffering; Optical device fabrication; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4577-0826-8
  • Type

    conf

  • DOI
    10.1109/GROUP4.2012.6324145
  • Filename
    6324145
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1627669