Title :
A 2.4G-Hz CMOS Power Amplifier
Author :
Fu, Jian ; Hao, Shilei ; Huang, Yumei ; Hong, Zhiliang
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
A 2.4G-Hz high linear power amplifier (PA) with a parallel class A&B structure is presented. The self-biased cascode transistors are used to improve the reliability. The PA was fabricated in a 0.13-μm CMOS process. Measurement results show the power gain is 9.6dB and the output power at the 1dB compression point is larger than 10.6dBm under a single supply voltage of +3.3V. The measured IMD3 is -40dBc at around 0.3dBm output power (one-tone each) in two-tone test.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF transistors; power amplifiers; reliability; CMOS power amplifier; frequency 2.4 GHz; gain 1 dB; gain 9.6 dB; reliability; self-biased cascode transistors; size 0.13 mum; voltage 3.3 V; CMOS integrated circuits; Gain; Logic gates; Power amplifiers; Power generation; Power measurement; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667289
