Title :
Recent progress in GaN FETs on silicon substrate for switching and RF power applications
Author :
Miyamoto, H. ; Shimawaki, H.
Author_Institution :
Nano Electron. Res. Labs., NEC Corp., Otsu, Japan
Abstract :
In this paper, we describe a GaN switching device with high V± uniformity and low on-resistance using novel piezo neutralization (PNT) technique and a 76 GHz GaN power amplifier(PA) on a Si substrate using 0.15-μm-gate GaN FETs and low-loss Coplanar Waveguide (CPW) lines.
Keywords :
coplanar waveguides; gallium compounds; millimetre wave amplifiers; millimetre wave field effect transistors; power amplifiers; switching circuits; CPW lines; GaN; GaN power amplifier; GaN switching device; RF power electronics; Si; frequency 76 GHz; gate GaN FET; low on-resistance; low-loss coplanar waveguide lines; piezoneutralization technique; silicon substrate; size 0.15 mum; FETs; Gallium nitride; Logic gates; Periodic structures; Power amplifiers; Silicon; Substrates;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551900
