The accelerated TID degradation induced by neutron irradiation on CMOS microprocessor

This paper presents an experimental study of total ionizing dose (TID) characterization of a CMOS microprocessor, which has been pre-exposed to different level of neutron fluence. The power supply current and output voltage of the IO port and pulse width modulation (PWM) are found to be sensitive in ionizing radiation test. Experimental results show that neutron irradiation affects subsequent TID behavior. The mechanism of this synergistic effect is discussed based on the degradation of basic transistor and schematic circuit diagram of IO port. The underlying neutron enhanced TID sensitivity may become significant under concurrent radiation environment.