DocumentCode
1627775
Title
An analytical model for negative bias temperature instability
Author
Wang, Shengcheng ; Du, Gang ; Liu, Xiaoyan
Author_Institution
Dept. of Microelectron., Peking Univ., Beijing, China
fYear
2010
Firstpage
1686
Lastpage
1688
Abstract
Negative bias temperature instability (NBTI) has become one of the major limiters for product lifetime, and various models have been proposed in order to explain NBTI. In this paper, an analytical model for DC NBTI and AC NBTI is proposed. This model describes the different time dependence of DC NBTI degradation at both short- and long-term stresses, and also reproduces the frequency and duty cycle dependencies of NBTI under AC stress.
Keywords
CMOS integrated circuits; integrated circuit modelling; transistor circuits; AC NBTI; DC NBTI; analytical model; long-term stresses; negative bias temperature instability; short-term stresses; Analytical models; Degradation; Integrated circuit modeling; Semiconductor device modeling; Stress; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667291
Filename
5667291
Link To Document