Title :
An analytical model for negative bias temperature instability
Author :
Wang, Shengcheng ; Du, Gang ; Liu, Xiaoyan
Author_Institution :
Dept. of Microelectron., Peking Univ., Beijing, China
Abstract :
Negative bias temperature instability (NBTI) has become one of the major limiters for product lifetime, and various models have been proposed in order to explain NBTI. In this paper, an analytical model for DC NBTI and AC NBTI is proposed. This model describes the different time dependence of DC NBTI degradation at both short- and long-term stresses, and also reproduces the frequency and duty cycle dependencies of NBTI under AC stress.
Keywords :
CMOS integrated circuits; integrated circuit modelling; transistor circuits; AC NBTI; DC NBTI; analytical model; long-term stresses; negative bias temperature instability; short-term stresses; Analytical models; Degradation; Integrated circuit modeling; Semiconductor device modeling; Stress; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667291
