• DocumentCode
    1627776
  • Title

    A high voltage, high speed polysilicon emitter bipolar transistor

  • Author

    McArthur, Douglas C. ; Conner, George

  • Author_Institution
    Philips Semiconductors, Sunnyvale, CA, USA
  • fYear
    1993
  • Firstpage
    132
  • Lastpage
    135
  • Abstract
    A high voltage polysilicon emitter bipolar transistor has been developed. The transistor exhibits a β - early voltage product of 12,000 and BVcbo, BVceo values of 60 and 30 volts, respectively and a cut-off frequency of 5.5 GHz. The design and fabrication of this transistor is described. A comparison of this device with other high voltage analog BJTs is made. It is shown that the use of bipolar scaling techniques on the design of high voltage BJTs results in very high performance analog devices
  • Keywords
    microwave bipolar transistors; 26 V; 5.5 GHz; Si; bipolar scaling techniques; bipolar transistor; cut-off frequency; design; elemental semiconductor; fabrication; high speed polysilicon emitter; high voltage; very high performance analog devices; Microwave bipolar transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-1316-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1993.617484
  • Filename
    617484
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1627776