Title :
High gain, high linearity, L-band SiGe low noise amplifier with fully-integrated matching network
Author :
Poh, John Chung Hang ; Cheng, Peng ; Thrivikraman, Tushar K. ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper presents an L-band silicon-germanium (SiGe) low-noise amplifier (LNA) for use in Global Positioning System (GPS) receivers. Implemented in a 200 GHz SiGe BiCMOS technology, the LNA occupies 1 × 1 mm2 (including the bondpads). The SiGe LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB from 1.2 to 2.4 GHz. At 1.575 GHz, the 1-dB compression point (P1dB) is 1.73 dBm, with an input third-order intercept point (IIP3) of -3.98 dBm.
Keywords :
BiCMOS integrated circuits; Global Positioning System; low noise amplifiers; L-band SiGe low noise amplifier; L-band silicon-germanium; SiGe BiCMOS technology; frequency 1.1 GHz to 2 GHz; frequency 1.2 GHz to 2.4 GHz; fully-integrated matching network; global positioning system receivers; low-noise amplifier; Cutoff frequency; Germanium silicon alloys; Global Positioning System; Heterojunction bipolar transistors; L-band; Linearity; Low-noise amplifiers; Noise figure; Radio frequency; Silicon germanium; Global Positioning System (GPS); L-band; heterojunction bipolar transistor (HBT); low noise amplifier (LNA); silicon-germanium (SiGe);
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422953
