Title :
Zero level metal thin film package for RF MEMS
Author :
Barriere, F. ; Crunteanu, A. ; Bessaudou, A. ; Pothier, A. ; Cosset, F. ; Mardivirin, D. ; Blondy, P.
Author_Institution :
XLIM, Univ. de Limoges, Limoges, France
Abstract :
Because they have moving parts, and they need to work in a specific atmosphere (vacuum, inert gas...), micro-electromechanical system (MEMS) are not compatible with integrated circuit packaging technologies. So, in order to accelerate commercialization of RF MEMS devices, the development of packaging technologies is one of the most critical issues that should be solved. A process has been developed to effectively package RF MEMS switches using a technique called wafer level thin film micro encapsulation. This technology is designed to be compatible with high performance RF MEMS ohmic switch fabrication.
Keywords :
microswitches; semiconductor device packaging; RF MEMS devices; RF MEMS ohmic switch fabrication; RF MEMS switches; integrated circuit packaging technology; microelectromechanical system; radio frequency; wafer level thin film micro encapsulation; zero level metal thin film package; Atmosphere; Integrated circuit packaging; Integrated circuit technology; Radiofrequency microelectromechanical systems; Switches; Thin film circuits; Transistors; Vacuum systems; Vacuum technology; Wafer scale integration; RF MEMS; package;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422957