DocumentCode :
1627993
Title :
Time-Of-Flight range finding sensor using an integrated PNP PIN Phototransistor in 180 nm CMOS
Author :
Davidovic, Milos ; Kostov, Plamen ; Hofbauer, Michael ; Gaberl, Wolfgang ; Zimmermann, Horst
Author_Institution :
Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
fYear :
2012
Firstpage :
258
Lastpage :
260
Abstract :
In this work we present the first approach of a Time-Of-Flight (TOF) sensor with an integrated bandwidth enhanced pnp phototransistor. The pixel reaches a fill factor of 67 %. A standard 180 nm CMOS process was used for implementing the TOF sensor together with the phototransistor. Both were combined to an optoelectronic integrated circuit. The power consumption of the sensor was 900 nW. Standard deviations of the measured distances well better than 5.1 cm were achieved for realistic optical powers in the range of nW. For the optimal working point of the phototransistor at around 100 nW a standard deviation of only 1.6 mm was measured.
Keywords :
CMOS integrated circuits; integrated optoelectronics; p-i-n photodiodes; phototransistors; CMOS process; PIN phototransistor; enhanced pnp phototransistor; integrated PNP; integrated bandwidth; optimal working point; optoelectronic integrated circuit; power 900 nW; time-of-flight range finding sensor; wavelength 180 nm; Optical attenuators; Optical fiber sensors; Optical saturation; Optical variables measurement; Phototransistors; Standards; PIN; Phototransistor; TOF sensor; depth sensor; distance measurement; time of flight;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
ISSN :
1949-2081
Print_ISBN :
978-1-4577-0826-8
Type :
conf
DOI :
10.1109/GROUP4.2012.6324152
Filename :
6324152
Link To Document :
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