• DocumentCode
    1628017
  • Title

    Capacitance of carrier depletion silicon-on-insulator optical modulation diodes

  • Author

    Jayatilleka, Hasitha ; Sacher, Wesley D. ; Poon, Joyce K S

  • Author_Institution
    Dept. of Electr. & Comput. Eng, Univ. of Toronto, Toronto, ON, Canada
  • fYear
    2012
  • Firstpage
    261
  • Lastpage
    263
  • Abstract
    An analytical model for the capacitance of silicon-on-insulator optical modulation diodes is derived. Fringe capacitance can increase power consumption (~18%) and reduce f3dB (~8GHz). Suppression of fringe fields can lead to speed and efficiency improvement.
  • Keywords
    optical modulation; power consumption; semiconductor diodes; silicon-on-insulator; analytical model; carrier depletion capacitance; frequency 8 GHz; fringe capacitance; fringe fields suppression; power consumption; silicon-on-insulator optical modulation diodes; Analytical models; Capacitance; Finite element methods; Optical modulation; Optical waveguides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4577-0826-8
  • Type

    conf

  • DOI
    10.1109/GROUP4.2012.6324153
  • Filename
    6324153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1628017