Title :
GHz response of Si photodiodes fabricated with 0.35-µm Si BiCMOS technology
Author :
Maekita, Kazuaki ; Shimotori, Toshiyuki ; Maruyama, Takeo ; Iiyama, Koichi
Author_Institution :
Natural Sci. & Technol., Kanazawa Univ., Ishikawa, Japan
Abstract :
We fabricated Si photodiode from 0.35 μm BiCMOS process and measured the sensitivity and the frequency response at the wavelength of 650nm. The responsivity was 0.11 A/W and the bandwidth was about 1 GHz.
Keywords :
BiCMOS integrated circuits; elemental semiconductors; photodiodes; silicon; BiCMOS technology; GHz response; Si; frequency response; photodiodes; responsivity; sensitivity; size 0.35 mum; wavelength 650 nm; Bandwidth; BiCMOS integrated circuits; Breakdown voltage; High speed optical techniques; Optical device fabrication; Optical sensors; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324155
