Title :
Device models in FDTD analysis of microwave circuits
Author :
Kuo, Chien-Nan ; Houshmand, Bijarz ; Itoh, Tatsuo
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
This paper describes the investigation of two different approaches to model microwave active devices using the finite-difference time-domain (FDTD) analysis. Norton-equivalent and Thevenin-equivalent approaches are used in the extended FDTD method to model the interaction between the three-terminal active device and the electromagnetic field by placing equivalent sources in the active region. A typical microwave amplifier is analyzed, and the simulation results agree well with expectation
Keywords :
III-V semiconductors; MESFET circuits; active networks; circuit analysis computing; electromagnetic fields; finite difference time-domain analysis; gallium arsenide; microwave amplifiers; microwave circuits; multiport networks; FDTD analysis; GaAs; Norton-equivalent approach; Thevenin-equivalent approach; electromagnetic field; equivalent sources; finite-difference time-domain; microwave active devices; microwave amplifier; microwave circuits; three-terminal active device; Analytical models; Circuit analysis; Circuit simulation; Equivalent circuits; Finite difference methods; Microwave circuits; Microwave devices; Microwave theory and techniques; Time domain analysis; Voltage;
Conference_Titel :
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location :
San Francisco
Print_ISBN :
0-7803-2516-8
DOI :
10.1109/ISSSE.1995.498033
