• DocumentCode
    1628115
  • Title

    A new and simple measurement approach for characterizing intermodulation distortion without using a spectrum analyzer

  • Author

    Madan, Anuj ; Thrivikraman, Tushar ; Seth, Sachin ; Verma, Rohan ; Poh, John ; Cressler, John D.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2010
  • Firstpage
    88
  • Lastpage
    91
  • Abstract
    This paper presents a novel test setup for characterizing intermodulation distortion in advanced devices and circuits. The setup uses a network analyzer to measure power levels of the fundamental and IM3 products for a two-tone input. It is shown that if the power calibration is correctly performed, the intermodulation distortion terms from a power sweep give the correct value of the input-referred third-order intercept point (IIP3). MOSFETs in a commercially-available 0.13 ¿m SiGe BiCMOS technology were measured across bias to validate the measurement approach. The results were subsequently validated using harmonic balance simulations based on design-kit compact models.
  • Keywords
    BiCMOS integrated circuits; MOSFET; intermodulation distortion; spectral analysers; BiCMOS technology; IM3 products; MOSFET; input-referred third-order intercept point; intermodulation distortion; measurement approach; network analyzer; power calibration; spectrum analyzer; test setup; two-tone input; BiCMOS integrated circuits; Calibration; Circuit testing; Distortion measurement; Germanium silicon alloys; Intermodulation distortion; MOSFETs; Power measurement; Silicon germanium; Spectral analysis; Intermodulation distortion; gain; linearity; network analyzer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    978-1-4244-5456-3
  • Type

    conf

  • DOI
    10.1109/SMIC.2010.5422963
  • Filename
    5422963