DocumentCode :
1628142
Title :
Modeling demands for nanoscale devices
Author :
Pourfath, M. ; Sverdlov, V. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear :
2010
Firstpage :
211
Lastpage :
214
Abstract :
With the progress of miniaturization the size of electronic devices is presently scaling down into the nanometer region, where quantum mechanical effects play an important role. Appropriate technology computer-aided design tools are essential to explore the physics of nanoscale devices and to find methods to optimize their functionality and performance. In this work we review the approaches to quantum mechanical modeling of carrier transport in nanoscale electronic devices. Numerical analyses for graphene nanoribbons are presented as a case study.
Keywords :
circuit CAD; graphene; nanoelectronics; carrier transport; graphene nanoribbons; nanoscale electronic devices; quantum mechanical effects; technology computer-aided design tools; Boltzmann equation; Green´s function methods; Mathematical model; Nanoscale devices; Quantum mechanics; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2010.5551915
Filename :
5551915
Link To Document :
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