Title :
Stress induced leakage current under NBT Stress in p-MOSFETs fabricated with 65nm technologies
Author :
Chen, Z. ; Ji, X. ; Yan, F. ; Shi, Y. ; Zhang, D. ; Guo, Q.
Author_Institution :
Inst. of Electron. Sci. & Eng., Nanjing Univ., Nanjing, China
Abstract :
This work presents the mechanism of Stress induced leakage current (SILC) under NBT stress. Experiment results show that there are three kinds of oxide traps generated under NBT stress: hole traps with full recoverable characteristic, hydrogen related traps with irrecoverable characteristic and a kind of positive trap which can promote the hole tunneling after neutralization. The cause of SILC is hole traps assisted tunneling under relative low temperature and the mixture of hole traps and hydrogen traps assisted tunneling under high temperature. Positive charge assisted tunneling is proposed to explain the degradation and full recovery phenomenon at temperature from -55°C to 75°C.
Keywords :
MOSFET; leakage currents; NBT stress; full recoverable characteristic; hole traps; hole tunneling; hydrogen related traps; hydrogen traps assisted tunneling; irrecoverable characteristic; oxide traps; p-MOSFET; positive charge assisted tunneling; positive trap; size 65 nm; stress induced leakage current; temperature -55 degC to 75 degC; Charge carrier processes; Current measurement; Logic gates; Stress; Temperature; Temperature measurement; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667303
