High performance SOI RF switches for wireless applications

Author

Wang, Dawn ; Wolf, Randy ; Joseph, Alvin ; Botula, Alan ; Rabbeni, Peter ; Boenke, Myra ; Harame, David ; Dunn, Jim

Author_Institution

IBM, Westford, MA, USA

fYear

2010

Firstpage

611

Lastpage

614

Abstract

This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch reference designs are presented. It has been demonstrated that SOI RF switch performance, in terms of power handling, linearity, insertion loss and isolation, is very competitive with those utilizing GaAs pHEMT and silicon-on-sapphire (SOS) technologies, while maintaining a cost and manufacturing advantage.

Keywords

CMOS integrated circuits; HEMT integrated circuits; III-V semiconductors; UHF circuits; field effect transistor switches; gallium arsenide; microwave switches; radiocommunication; silicon-on-insulator; CMOS silicon-on-insulator technology; GaAs; SOI RF switch; pHEMT; power handling; silicon-on-sapphire technology; single pole eight throw switch; single pole four throw switch; size 0.18 mum; wireless applications; Antennas; FETs; Harmonic analysis; Logic gates; Radio frequency; Silicon on insulator technology; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667307

Filename

5667307