DocumentCode :
1628275
Title :
Design of Ku-band SIR interdigital bandpass filter using silicon-based micromachining technology
Author :
Hsieh, Sheng-Chi ; Chang, Chia-Chan ; Chen, Yi-Ming ; Lin, Chun-Chi ; Chang, Sheng-Fuh
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Cheng Univ., Chiayi, Taiwan
fYear :
2010
Firstpage :
104
Lastpage :
107
Abstract :
This paper presents design, fabrication, and measurement of a Ku-band micromachined bandpass filter. The fourth-order interdigital filtered based on step-impedance resonators (SIRs) is fabricated and self-packaged by three high-resistivity(> 10K¿cm) silicon wafers to achieve compactness and low loss. The proposed circuit is designed to produce a passband of 21% centered at 14.2 GHz. Experimental results exhibit that the insertion loss is 2.3 dB and the return loss is better than 20 dB within passband. The fabrication technology can be applied for other micromachined devices.
Keywords :
band-pass filters; elemental semiconductors; micromachining; microwave filters; resonator filters; silicon; Ku-band SIR interdigital bandpass filter; Ku-band micromachined bandpass filter; Si; fourth-order interdigital filter; frequency 14.2 GHz; high-resistivity silicon wafers; insertion loss; loss 2.3 dB; return loss; silicon-based micromachining technology; step-impedance resonators; Band pass filters; Circuits; Fabrication; Impedance; Micromachining; Microwave filters; Passband; Resonance; Resonator filters; Silicon; Interdigital filter; Micromachined; Step-impedance resonator (SIR); bandpass filter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
Type :
conf
DOI :
10.1109/SMIC.2010.5422969
Filename :
5422969
Link To Document :
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