DocumentCode
1628389
Title
22 nm node Si SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistor and its SOC with channel length less than 10nm for communication applications
Author
Zhao, Y.F. ; Xu, Y.Z. ; Bai, D. ; Yang, Y.H. ; Xu, C.H. ; Shen, S.K. ; Mon, B. ; Fan, H. ; Xu, P. ; Xu, J. ; Yang, R. ; Li, G.H. ; Huang, D.H. ; Huang, C.
Author_Institution
Beijing Microelectron. Inst., Beijing, China
fYear
2010
Firstpage
608
Lastpage
610
Abstract
22nm node Si SOI Coplanar “N Channel Vertical Dual Carrier Field Effect Transistors” (VDCFET) and its SOC with effective channel length less than 10nm for communication applications are presented.
Keywords
field effect transistors; silicon-on-insulator; system-on-chip; SOC; SOI; VDCFET; coplanar N channel vertical dual carrier field effect transistor; CMOS integrated circuits; FETs; Fabrication; Junctions; Silicon; Silicon on insulator technology; System-on-a-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667311
Filename
5667311
Link To Document