• DocumentCode
    1628445
  • Title

    Further generalized four-port de-embedding method by dropping ideality assumptions on the THROUGH structure

  • Author

    Xia, Kejun ; Niu, Guofu ; Wei, Xiaoyun

  • Author_Institution
    Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA
  • fYear
    2010
  • Firstpage
    184
  • Lastpage
    187
  • Abstract
    Four-port on-wafer de-embedding is necessary for on-wafer measurement at frequencies above 50 GHz. We found notable discrepancy between the Y-parameters de-embedded using different options provided by a recently published general four-port de-embedding algorithm to solve the four-port Y-parameter matrices. The problem is caused by the ideality assumptions on the internal THROUGH test structure. In this paper, we develop a further generalized algorithm that drops any ideality assumption except passivity on the THROUGH structure. The new method works for transistor S-parameters with or without Impedance Standard Substrate calibration.
  • Keywords
    S-parameters; calibration; microwave measurement; microwave transistors; multiport networks; semiconductor device measurement; semiconductor device testing; four-port Y-parameter matrix; four-port on-wafer de-embedding method; ideality assumptions; impedance standard substrate calibration; internal THROUGH test structure; on-wafer measurement; transistor S-parameters; Calibration; Chromium; Electric variables measurement; Frequency measurement; Impedance; Measurement standards; Microwave measurements; Microwave transistors; Scattering parameters; Testing; 4-port network; Deembedding; microwave on-wafer measurements; scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    978-1-4244-5456-3
  • Type

    conf

  • DOI
    10.1109/SMIC.2010.5422976
  • Filename
    5422976