DocumentCode :
1628445
Title :
Further generalized four-port de-embedding method by dropping ideality assumptions on the THROUGH structure
Author :
Xia, Kejun ; Niu, Guofu ; Wei, Xiaoyun
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA
fYear :
2010
Firstpage :
184
Lastpage :
187
Abstract :
Four-port on-wafer de-embedding is necessary for on-wafer measurement at frequencies above 50 GHz. We found notable discrepancy between the Y-parameters de-embedded using different options provided by a recently published general four-port de-embedding algorithm to solve the four-port Y-parameter matrices. The problem is caused by the ideality assumptions on the internal THROUGH test structure. In this paper, we develop a further generalized algorithm that drops any ideality assumption except passivity on the THROUGH structure. The new method works for transistor S-parameters with or without Impedance Standard Substrate calibration.
Keywords :
S-parameters; calibration; microwave measurement; microwave transistors; multiport networks; semiconductor device measurement; semiconductor device testing; four-port Y-parameter matrix; four-port on-wafer de-embedding method; ideality assumptions; impedance standard substrate calibration; internal THROUGH test structure; on-wafer measurement; transistor S-parameters; Calibration; Chromium; Electric variables measurement; Frequency measurement; Impedance; Measurement standards; Microwave measurements; Microwave transistors; Scattering parameters; Testing; 4-port network; Deembedding; microwave on-wafer measurements; scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
Type :
conf
DOI :
10.1109/SMIC.2010.5422976
Filename :
5422976
Link To Document :
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