Study of flicker phase modulation and amplitude modulation noise in field effect transistor amplifiers

Author

Peacock, S.C. ; Stauffer, M.A. ; Van Slyke, A.M. ; Ferre-Pikal, E.S.

Author_Institution

Wyoming Univ., Laramie, WY, USA

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

200

Lastpage

204

Abstract

We present theoretical and experimental results on up-conversion of 1/f low-frequency noise into amplitude modulation (AM) noise and phase modulation (PM) noise in linear field-effect transistor (FET) amplifiers. Two types of transistors, used in a common source (CS) configuration, were studied: junction field-effect transistors (JFETs) and metal-semiconductor field-effect transistors (MESFETs). AM and PM sensitivities to baseband current and voltage noise are computed from theory and experimentally measured. A negative feedback technique that reduces the baseband noise is also investigated

Keywords

1/f noise; JFET circuits; MESFET circuits; circuit noise; feedback amplifiers; flicker noise; phase noise; 1/f noise; amplitude modulation noise; baseband current noise; common source configuration; junction field-effect transistors; linear field-effect transistor amplifiers; metal-semiconductor field-effect transistors; negative feedback technique; phase modulation noise; up-conversion; voltage noise; 1f noise; Amplitude modulation; Baseband; FETs; JFETs; Low-frequency noise; Low-noise amplifiers; Noise level; Phase modulation; Phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium and PDA Exhibition, 2001. Proceedings of the 2001 IEEE International

Conference_Location

Seattle, WA

ISSN

1075-6787

Print_ISBN

0-7803-7028-7

Type

conf

DOI

10.1109/FREQ.2001.956186

Filename

956186