• DocumentCode
    1628564
  • Title

    A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering

  • Author

    Lam, Kai-Tak ; Da, Haixia ; Chin, Sai-Kong ; Samudra, G. ; Yeo, Yee-Chia ; Liang, Gengchiau

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2010
  • Firstpage
    79
  • Lastpage
    80
  • Abstract
    The bandgap and the length of the heterojunction (HJ) region in the channel near the source play an important role in device performance of graphene nanoribbon heterojunction tunneling field-effect transistors (GNRHJ TFETs). In this work, we provide fundamental insights on the device physics for enhancement of ION/IOFF through fine-tuning of the HJ region.
  • Keywords
    energy gap; field effect transistors; graphene; C; GNRHJ TFET; bandgap engineering; graphene nanoribbon heterojunction tunneling field-effect transistors; Doping; Materials; Nanoscale devices; Optical wavelength conversion; Performance evaluation; Photonic band gap; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551931
  • Filename
    5551931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1628564