Temperature calibration of a differential pair based direct digital synthesizer through subsampling spectral analysis

Author

Laemmle, Benjamin ; Wagner, Christoph ; Jaeger, Herbert ; Weigel, Robert

Author_Institution

Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany

fYear

2010

Firstpage

192

Lastpage

195

Abstract

The temperature behavior of a high speed direct digital synthesizer with a maximum clock frequency of 16.8 GHz and a power consumption of 488 mW at room temperature is investigated. The DDS has been manufactured in a 200-GHz f_t SiGe bipolar technology and occupies a chip area of 1.15 mm². A subsampling approach is introduced to analyze the output spectrum of the DDS. A calibration is performed over temperature to improve the spectral performance of the DDS. The calibration is based on a two point measurement and the use of a look-up table. After calibration, the third harmonic is below 53 dBc and a narrow band SFDR is nearly constant at 38 dBc.

Keywords

Ge-Si alloys; calibration; circuit testing; direct digital synthesis; heterojunction bipolar transistors; spectral analysis; table lookup; DDS; SFDR; SiGe bipolar technology; direct digital synthesizer; frequency 16.8 GHz; power 488 mW; power consumption; subsampling spectral analysis; temperature 293 K to 298 K; temperature calibration; third harmonic; Calibration; Clocks; Energy consumption; Frequency synthesizers; Germanium silicon alloys; Manufacturing; Semiconductor device measurement; Silicon germanium; Spectral analysis; Temperature; SiGe; direct digital synthesizer; frequency synthesizer; heterojunction bipolar transistor; spectral analysis; subsampling;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on

Conference_Location

New Orleans, LA

Print_ISBN

978-1-4244-5456-3

Type

conf

DOI

10.1109/SMIC.2010.5422984

Filename

5422984