Longitudinal electron transport in non regular electron waveguides for future ultra fast nanoelectronic devices

Quasiballistic longitudinal electron transport in the 2D and 1D heterostuctures (or electron waveguides (EW)) can be effectively controlled by varying transverse potential distribution, dimensions or shape of an EW cross section, since any such deformation appears as a “quasipotential” barrier or a “quasipotential” well. Specific properties of these quasipotential barriers and wells as well as their device applications are analyzed. The examples include: 1. Control of electron transport through a short section of a 2D EW by varying its transverse dimensions or transverse potential distribution. 2. Formation of population inversion of the electron energy subbands in EWs with step-like discontinuities. 3. Interference of different electron “modes” in non regular EWs and application of this effect for design of single channel interference transistors and electron energy filters