Title :
Application of Proportional Difference Operator method on retention characteristics study of Flash Memory
Author :
Xie, Bing ; Xu, Mingzhen ; Tan, Changhua
Author_Institution :
Dept. of Microelectron., Peking Univ., Beijing, China
Abstract :
The retention characteristics of Flash Memory structures was mainly studied using Proportional Difference Operator (PDO) method in this paper. This method makes it rapid to extract the leakage time constant of charge in floating gate.
Keywords :
flash memories; flash memory; floating gate; leakage time constant; proportional difference operator method; retention characteristics; Capacitance; Flash memory cells; Logic gates; Nonvolatile memory; Stress; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667321
