• DocumentCode
    1628635
  • Title

    Application of Proportional Difference Operator method on retention characteristics study of Flash Memory

  • Author

    Xie, Bing ; Xu, Mingzhen ; Tan, Changhua

  • Author_Institution
    Dept. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2010
  • Firstpage
    1719
  • Lastpage
    1721
  • Abstract
    The retention characteristics of Flash Memory structures was mainly studied using Proportional Difference Operator (PDO) method in this paper. This method makes it rapid to extract the leakage time constant of charge in floating gate.
  • Keywords
    flash memories; flash memory; floating gate; leakage time constant; proportional difference operator method; retention characteristics; Capacitance; Flash memory cells; Logic gates; Nonvolatile memory; Stress; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667321
  • Filename
    5667321
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1628635