• DocumentCode
    1628640
  • Title

    Design and analysis of a W-Band detector in 0.18-µm SiGe BiCMOS

  • Author

    Le Zheng ; Gilreath, Leland ; Jain, Vipul ; Heydari, Payam

  • Author_Institution
    Nanoscale Commun. Integrated Circuits Lab., Univ. of California, Irvine, CA, USA
  • fYear
    2010
  • Firstpage
    196
  • Lastpage
    199
  • Abstract
    This paper presents the analysis, design and implementation of a millimeter-wave W-band power detector. Fabricated in a 0.18-μm SiGe BiCMOS technology, the detector circuit exhibits a responsivity of 91 kV/W, a noise equivalent power of 0.5 pW/Hz1/2, and a noise figure of 29 dB. The power dissipation of the detector is 75 μW. Reasonable agreement between simulations and measurements is obtained. To the authors´ best knowledge, the detector in this work achieves the highest responsivity reported to date for any solid-state W-band detector.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MMIC; detector circuits; BiCMOS; detector circuit; millimeter-wave W-band power detector; noise figure 29 dB; power 75 μW; power dissipation; size 0.18 μm; BiCMOS integrated circuits; Dicke switch; W-band; direct-detection; millimeter-wave; passive imaging; power detector; radiometers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    978-1-4244-5456-3
  • Type

    conf

  • DOI
    10.1109/SMIC.2010.5422987
  • Filename
    5422987
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1628640